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IRFP27N60K, SiHFP27N60K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 180 56 86 Single
D
FEATURES
600 0.18
* Low Gate Charge Qg Results in Simple Drive Requirement Ruggedness
Available
* Improved Gate, Avalanche and Dynamic dV/dt RoHS*
COMPLIANT
* Fully Characterized Capacitance and Avalanche Voltage and Current * Enhanced Body Diode dV/dt Capability * Lead (Pb)-free Available
TO-247
APPLICATIONS
* Hard Switching Primary or PFC Switch
G
* Switch Mode Power Supply (SMPS) * Uninterruptible Power Supply
S N-Channel MOSFET
S D G
* High Speed Power Switching * Motor Drive
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-247 IRFP27N60KPbF SiHFP27N60K-E3 IRFP27N60K SiHFP27N60K
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM LIMIT 600 30 27 18 110 4.0 EAS IAR EAR TC = 25 C PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw 530 27 50 500 13 - 55 to + 150 300d 10 1.1 W/C mJ A mJ W V/ns C lbf * in N*m A UNIT V
Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta
Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 C, L = 1.4 mH, RG = 25 , IAS = 27 A, dV/dt = 13 V/ns (see fig. 12). c. ISD 27 A, dI/dt 390 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91219 S-Pending-Rev. B, 12-Jun-08 www.vishay.com 1
WORK-IN-PROGRESS
IRFP27N60K, SiHFP27N60K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.24 MAX. 40 0.29 C/W UNIT
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time IS ISM VSD trr Qrr IRRM ton TJ = 25 C, IF = 27 A, dI/dt = 100 A/sb MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs
VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 30 V VDS = 600 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 125 C VGS = 10 V ID = 16 Ab VDS = 50 V, ID = 16 A VGS = 0 V VDS = 25 V f = 1.0 MHz, see fig. 5 VGS = 0 V VGS = 0 V VGS = 0 V VDS = 1.0 V , f = 1.0 MHz VDS = 480 V , f = 1.0 MHz VDS = 0 V to 480 V ID = 27 A, VDS = 480 V see fig. 6 and 13b
600 3.0 14
640 0.18 -
5.0 100 50 250 0.22 -
V mV/C V nA A S
Ciss Coss Crss Coss Coss eff. Qg Qgs Qgd td(on) tr td(off) tf VGS = 10 V
-
4660 460 41 5490 120 250 27 110 43 38
180 56 86 ns nC pF
VDD = 300 V, ID = 27 A RG = 4.3 , VGS = 10 V, see fig. 10b
-
-
620 11 36
27 A 110 1.5 920 16 53 V ns C A
G
S
TJ = 25 C, IS = 27 A, VGS = 0 Vb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDS.
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Document Number: 91219 S-Pending-Rev. B, 12-Jun-08
IRFP27N60K, SiHFP27N60K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
1000
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
1000.00
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current ( )
100
100.00
T J = 150C
10.00
1
1.00
0.1
T J = 25C
0.10
5.0V
0.01
20s PULSE WIDTH Tj = 25C
0.001 0.1 1 10 100
0.01 5.0 7.0 9.0
VDS = 100V 20s PULSE WIDTH
11.0 13.0 15.0
VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
3.5
ID, Drain-to-Source Current (A)
R DS(on) , Drain-to-Source On Resistance
10
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
I D = 28A
3.0
2.5
5.0V
1
(Normalized)
2.0
1.5
0.1
1.0
20s PULSE WIDTH Tj = 150C
0.01 0.1 1 10 100
0.5
V GS = 10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics
TJ , Junction Temperature
( C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91219 S-Pending-Rev. B, 12-Jun-08
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IRFP27N60K, SiHFP27N60K
Vishay Siliconix
100000
1000
VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
10000
100
C, Capacitance(pF)
Ciss
1000
I SD , Reverse Drain Current (A)
10
T J 150 C =
Coss
100
T J 25 C =
1
Crss
10 1 10 100 1000
V GS = 0 V
0.1 0.2 0.5 0.8 1.1 1.4
VDS , Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V SD ,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
12
ID = 28A
10
VGS , Gate-to-Source Voltage (V)
7
ID, Drain-to-Source Current (A)
VDS = 480V VDS = 300V VDS = 120V
1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100
10 100sec 1msec 1 Tc = 25C Tj = 150C Single Pulse 10 100
5
2
10msec 1000 10000
0 0 30 60 90 120 150
0.1
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
VDS , Drain-toSource Voltage (V) Fig. 8 - Maximum Safe Operating Area
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Document Number: 91219 S-Pending-Rev. B, 12-Jun-08
IRFP27N60K, SiHFP27N60K
Vishay Siliconix
RD VDS VGS
25
30
D.U.T. + - VDD
RG
20
ID , Drain Current (A)
10 V
Pulse width 1 s Duty factor 0.1 %
15
Fig. 10a - Switching Time Test Circuit
10
VDS
5
90 %
0 25 50 75 100 125 150
TC , Case Temperature
( C)
10 % VGS td(on) tr td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
1
(Z thJC )
D = 0.50 0.1 0.20
Thermal Response
0.10 0.05 P DM 0.01 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.001 0.00001 0.0001 0.001 0.01 t1/ t 2 +TC 1
J = P DM x Z thJC
0.1
t 1, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
VDS
L
Driver
RG 20 V tp
D.U.T IAS 0.01
+ A - VDD
A
IAS
Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5
Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91219 S-Pending-Rev. B, 12-Jun-08
IRFP27N60K, SiHFP27N60K
Vishay Siliconix
950
TOP
760
BOTTOM
ID 13A 18A 28A
EAS , Single Pulse Avalanche Energy (mJ)
570
380
190
0 25 50 75 100 125 150
Starting Tj, Junction Temperature
( C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T.
50 k
12 V
VGS QGS
QG
0.2 F
0.3 F
QGD D.U.T.
+ -
VDS
VG
VGS
3 mA
Charge
IG ID Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91219 S-Pending-Rev. B, 12-Jun-08
IRFP27N60K, SiHFP27N60K
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T
+
Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer
+ +
-
RG
* * * *
dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test
+ VDD
Driver gate drive P.W. Period D=
P.W. Period VGS = 10 V*
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Re-applied voltage Inductor curent
Body diode
forward drop
Ripple 5%
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91219.
Document Number: 91219 S-Pending-Rev. B, 12-Jun-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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